RF Micro Devices announced the release of the CXE-1089Z GaAs pHEMT LNA
for use in cable set-top box and digital television (DTV) applications.
The CXE-1089Z is optimized for both low noise figure and low current
consumption in order to best satisfy the increasing performance
requirements of next-generation, higher-bandwidth devices.
The CXE-1089Z features RFMD's patented active bias circuitry, which
stabilizes bias current across changes in threshold voltage related to
temperature and process variation, thereby reducing current
consumption. The GaAs pHEMT LNA also utilizes a Darlington
configuration with an optional external bias control, which further
reduces current consumption -- and lowers the thermal profile of the
end product -- while maintaining linear RF performance optimized for
each application.
Unlike competing devices focused on a single performance parameter, the
CXE-1089Z delivers a optimized blend of low noise figure, low
multi-carrier distortion and low current consumption, said Alastair
Upton, general manager of RFMD's Broadband and Consumer Business Unit.
This unique blend of performance combined with our ability to deliver a
broad portfolio of CATV products were key elements to RFMD's recent
design win at a leading set-top box and tuner module OEM with the
CXE-1089Z.
Features of the CXE-1089Z include:
- Single 5 V supply operation
- Noise Figure of 2.8 dB typical
- CTB of -79 dBc and CSO of -66 dBc at 110 channels, +15 dBmV/channel at the input
- Gain response of 13dB +/- 0.4dB over 50 to 1000 MHz
- Input return loss of greater than 18 dB
The CXE-1089Z is housed in a compact SOT-89 package, and samples are
available immediately. Based on design win activity RFMD(R) anticipates
volume shipments of the CXE-1089Z will commence in the current calendar
year.